IXYN100N120B3H1 IGBT Transistor

The IXYN100N120B3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN100N120B3H1 transistor as follows.

IXYN100N120B3H1 Transistor Specification

Transistor Code		IXYN100N120B3H1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	690W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.6V
Collector Current (Maximum)	IC	165A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		367
Rise Time		90

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