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IXYN100N120B3H1 IGBT Transistor

The IXYN100N120B3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN100N120B3H1 transistor as follows.

Circuit diagram symbol of the IXYN100N120B3H1 transistor

IXYN100N120B3H1 Transistor Specification

Transistor Code IXYN100N120B3H1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 690W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.6V
Collector Current (Maximum) IC 165A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 367
Rise Time 90

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