IXYK140N90C3 IGBT Transistor

The IXYK140N90C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYK140N90C3 transistor as follows.

IXYK140N90C3 Transistor Specification

Transistor Code		IXYK140N90C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	1630W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	310A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		570
Rise Time		86

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