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IXYK120N120B3 IGBT Transistor

The IXYK120N120B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYK120N120B3 transistor as follows.

Circuit diagram symbol of the IXYK120N120B3 transistor

IXYK120N120B3 Transistor Specification

Transistor Code IXYK120N120B3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264P
Collector Power Dissipation (Maximum) Pc 1500W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 320A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 567
Rise Time 54

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