IXYK100N120B3 IGBT Transistor

The IXYK100N120B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYK100N120B3 transistor as follows.

IXYK100N120B3 Transistor Specification

Transistor Code		IXYK100N120B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	1150W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.6V
Collector Current (Maximum)	IC	225A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		367
Rise Time		90

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