IXYJ30N120C3D1 IGBT Transistor

The IXYJ30N120C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYJ30N120C3D1 transistor as follows.

IXYJ30N120C3D1 Transistor Specification

Transistor Code		IXYJ30N120C3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	140W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	32A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		140
Rise Time		40

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