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IXYH82N120C3 IGBT Transistor

The IXYH82N120C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH82N120C3 transistor as follows.

Circuit diagram symbol of the IXYH82N120C3 transistor

IXYH82N120C3 Transistor Specification

Transistor Code IXYH82N120C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 160A
Rise Time 93

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