IXYH80N90C3 IGBT Transistor

The IXYH80N90C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH80N90C3 transistor as follows.

IXYH80N90C3 Transistor Specification

Transistor Code		IXYH80N90C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	830W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	165A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		243
Rise Time		103

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