IXYH75N65C3D1 IGBT Transistor

The IXYH75N65C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH75N65C3D1 transistor as follows.

IXYH75N65C3D1 Transistor Specification

Transistor Code		IXYH75N65C3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	750W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	175A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		330
Rise Time		65

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