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IXYH75N65C3 IGBT Transistor

The IXYH75N65C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH75N65C3 transistor as follows.

Circuit diagram symbol of the IXYH75N65C3 transistor

IXYH75N65C3 Transistor Specification

Transistor Code IXYH75N65C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 750W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.3V
Collector Current (Maximum) IC 175A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 190
Rise Time 65

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