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IXYH50N65C3H1 IGBT Transistor

The IXYH50N65C3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH50N65C3H1 transistor as follows.

Circuit diagram symbol of the IXYH50N65C3H1 transistor

IXYH50N65C3H1 Transistor Specification

Transistor Code IXYH50N65C3H1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 600W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 130A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 230
Rise Time 35

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