IXYH24N90C3D1 IGBT Transistor

The IXYH24N90C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH24N90C3D1 transistor as follows.

IXYH24N90C3D1 Transistor Specification

Transistor Code		IXYH24N90C3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	44A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		64
Rise Time		36

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