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IXYH20N120C3D1 IGBT Transistor

The IXYH20N120C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH20N120C3D1 transistor as follows.

Circuit diagram symbol of the IXYH20N120C3D1 transistor

IXYH20N120C3D1 Transistor Specification

Transistor Code IXYH20N120C3D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 230W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.4V
Collector Current (Maximum) IC 36A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 120
Rise Time 29

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