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IXYH120N65C3 IGBT Transistor

The IXYH120N65C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH120N65C3 transistor as follows.

Circuit diagram symbol of the IXYH120N65C3 transistor

IXYH120N65C3 Transistor Specification

Transistor Code IXYH120N65C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 1361W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.8V
Collector Current (Maximum) IC 260A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 376
Rise Time 29

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