IXYH100N65B3 IGBT Transistor

The IXYH100N65B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH100N65B3 transistor as follows.

IXYH100N65B3 Transistor Specification

Transistor Code		IXYH100N65B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	830W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	225A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		280
Rise Time		37

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