IXYF40N450 IGBT Transistor

The IXYF40N450 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYF40N450 transistor as follows.

IXYF40N450 Transistor Specification

Transistor Code		IXYF40N450
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		I4PAK
Collector Power Dissipation (Maximum)	Pc	290W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.9V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		146
Rise Time		330

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