IXYF30N450 IGBT Transistor

The IXYF30N450 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYF30N450 transistor as follows.

IXYF30N450 Transistor Specification

Transistor Code		IXYF30N450
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		I4PAK
Collector Power Dissipation (Maximum)	Pc	230W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.9V
Collector Current (Maximum)	IC	23A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		83
Rise Time		318

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