IXYA8N90C3D1 IGBT Transistor

The IXYA8N90C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYA8N90C3D1 transistor as follows.

IXYA8N90C3D1 Transistor Specification

Transistor Code		IXYA8N90C3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.15V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		30
Rise Time		20

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