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IXYA8N90C3D1 IGBT Transistor

The IXYA8N90C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYA8N90C3D1 transistor as follows.

Circuit diagram symbol of the IXYA8N90C3D1 transistor

IXYA8N90C3D1 Transistor Specification

Transistor Code IXYA8N90C3D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector Power Dissipation (Maximum) Pc 125W
Collector-Emitter Voltage (Maximum) VCE 900V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.15V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 30
Rise Time 20

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