IXYA20N65B3 IGBT Transistor

The IXYA20N65B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYA20N65B3 transistor as follows.

IXYA20N65B3 Transistor Specification

Transistor Code		IXYA20N65B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	230W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	58A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		66
Rise Time		25

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