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IXYA20N65B3 IGBT Transistor

The IXYA20N65B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYA20N65B3 transistor as follows.

Circuit diagram symbol of the IXYA20N65B3 transistor

IXYA20N65B3 Transistor Specification

Transistor Code IXYA20N65B3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector Power Dissipation (Maximum) Pc 230W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 58A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 66
Rise Time 25

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