IXYA20N120C3HV IGBT Transistor

The IXYA20N120C3HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYA20N120C3HV transistor as follows.

IXYA20N120C3HV Transistor Specification

Transistor Code		IXYA20N120C3HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263HV
Collector Power Dissipation (Maximum)	Pc	278W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.4V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		70
Rise Time		29

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