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IXYA15N65C3D1 IGBT Transistor

The IXYA15N65C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYA15N65C3D1 transistor as follows.

Circuit diagram symbol of the IXYA15N65C3D1 transistor

IXYA15N65C3D1 Transistor Specification

Transistor Code IXYA15N65C3D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector Power Dissipation (Maximum) Pc 200W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 38A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 52
Rise Time 20

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