IXXX200N65B4 IGBT Transistor

The IXXX200N65B4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXX200N65B4 transistor as follows.

IXXX200N65B4 Transistor Specification

Transistor Code		IXXX200N65B4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		PLUS247
Collector Power Dissipation (Maximum)	Pc	1630W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	480A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		670
Rise Time		76

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