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IXXX200N60C3 IGBT Transistor

The IXXX200N60C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXX200N60C3 transistor as follows.

Circuit diagram symbol of the IXXX200N60C3 transistor

IXXX200N60C3 Transistor Specification

Transistor Code IXXX200N60C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package PLUS247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 340A
Rise Time 80

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