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IXXX160N65C4 IGBT Transistor

The IXXX160N65C4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXX160N65C4 transistor as follows.

Circuit diagram symbol of the IXXX160N65C4 transistor

IXXX160N65C4 Transistor Specification

Transistor Code IXXX160N65C4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package PLUS247
Collector Power Dissipation (Maximum) Pc 940W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 290A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 510
Rise Time 67

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