IXXP50N60B3 IGBT Transistor

The IXXP50N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXP50N60B3 transistor as follows.

IXXP50N60B3 Transistor Specification

Transistor Code		IXXP50N60B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	120A
Rise Time		135

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