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IXXN110N65C4H1 IGBT Transistor

The IXXN110N65C4H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXN110N65C4H1 transistor as follows.

Circuit diagram symbol of the IXXN110N65C4H1 transistor

IXXN110N65C4H1 Transistor Specification

Transistor Code IXXN110N65C4H1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 750W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.35V
Collector Current (Maximum) IC 210A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 440
Rise Time 46

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