IXXN110N65B4H1 IGBT Transistor

The IXXN110N65B4H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXN110N65B4H1 transistor as follows.

IXXN110N65B4H1 Transistor Specification

Transistor Code		IXXN110N65B4H1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	750W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	215A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		440
Rise Time		46

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