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IXXK160N65B4 IGBT Transistor

The IXXK160N65B4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXK160N65B4 transistor as follows.

Circuit diagram symbol of the IXXK160N65B4 transistor

IXXK160N65B4 Transistor Specification

Transistor Code IXXK160N65B4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector Power Dissipation (Maximum) Pc 940W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 310A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 500
Rise Time 64

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