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IXXH80N65B4H1 IGBT Transistor

The IXXH80N65B4H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH80N65B4H1 transistor as follows.

Circuit diagram symbol of the IXXH80N65B4H1 transistor

IXXH80N65B4H1 Transistor Specification

Transistor Code IXXH80N65B4H1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 160A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 296
Rise Time 90

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