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IXXH75N60C3D1 IGBT Transistor

The IXXH75N60C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH75N60C3D1 transistor as follows.

Circuit diagram symbol of the IXXH75N60C3D1 transistor

IXXH75N60C3D1 Transistor Specification

Transistor Code IXXH75N60C3D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 150A
Rise Time 75

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