IXXH75N60C3 IGBT Transistor

The IXXH75N60C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH75N60C3 transistor as follows.

IXXH75N60C3 Transistor Specification

Transistor Code		IXXH75N60C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	150A
Rise Time		75

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