IXXH75N60B3 IGBT Transistor

The IXXH75N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH75N60B3 transistor as follows.

IXXH75N60B3 Transistor Specification

Transistor Code		IXXH75N60B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	160A
Rise Time		125

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