IXXH50N60B3D1 IGBT Transistor

The IXXH50N60B3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH50N60B3D1 transistor as follows.

IXXH50N60B3D1 Transistor Specification

Transistor Code		IXXH50N60B3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	120A
Rise Time		135

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