IXXH30N60C3D1 IGBT Transistor

The IXXH30N60C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH30N60C3D1 transistor as follows.

IXXH30N60C3D1 Transistor Specification

Transistor Code		IXXH30N60C3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	60A
Rise Time		32

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