IXXH30N60B3 IGBT Transistor

The IXXH30N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH30N60B3 transistor as follows.

IXXH30N60B3 Transistor Specification

Transistor Code		IXXH30N60B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	270W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		137
Rise Time		36

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