IXXH150N60C3 IGBT Transistor

The IXXH150N60C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH150N60C3 transistor as follows.

IXXH150N60C3 Transistor Specification

Transistor Code		IXXH150N60C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	1360W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	300A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		403
Rise Time		70

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