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IXXH100N60C3 IGBT Transistor

The IXXH100N60C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH100N60C3 transistor as follows.

Circuit diagram symbol of the IXXH100N60C3 transistor

IXXH100N60C3 Transistor Specification

Transistor Code IXXH100N60C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 190A
Rise Time 75

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