IXXA30N65C3HV IGBT Transistor

The IXXA30N65C3HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXA30N65C3HV transistor as follows.

IXXA30N65C3HV Transistor Specification

Transistor Code		IXXA30N65C3HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	230W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	52A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		133
Rise Time		33

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