IXSX50N60BU1 IGBT Transistor

The IXSX50N60BU1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSX50N60BU1 transistor as follows.

IXSX50N60BU1 Transistor Specification

Transistor Code		IXSX50N60BU1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		PLUS247
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		3850pF
Rise Time		70

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