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IXSX50N60BD1 IGBT Transistor

The IXSX50N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSX50N60BD1 transistor as follows.

Circuit diagram symbol of the IXSX50N60BD1 transistor

IXSX50N60BD1 Transistor Specification

Transistor Code IXSX50N60BD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package PLUS247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC

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