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IXSX50N60AU1S IGBT Transistor

The IXSX50N60AU1S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSX50N60AU1S transistor as follows.

Circuit diagram symbol of the IXSX50N60AU1S transistor

IXSX50N60AU1S Transistor Specification

Transistor Code IXSX50N60AU1S
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247SMD
Collector Power Dissipation (Maximum) Pc 300W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 70

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