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IXST35N120B IGBT Transistor

The IXST35N120B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXST35N120B transistor as follows.

Circuit diagram symbol of the IXST35N120B transistor

IXST35N120B Transistor Specification

Transistor Code IXST35N120B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3.6V
Collector Current (Maximum) IC 70A
Rise Time 180

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