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IXST30N60C IGBT Transistor

The IXST30N60C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXST30N60C transistor as follows.

Circuit diagram symbol of the IXST30N60C transistor

IXST30N60C Transistor Specification

Transistor Code IXST30N60C
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 55A
Operating Junction Temperature (Maximum) 150 oC

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