IXST15N120BD1 IGBT Transistor

The IXST15N120BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXST15N120BD1 transistor as follows.

IXST15N120BD1 Transistor Specification

Transistor Code		IXST15N120BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.4V
Collector Current (Maximum)	IC	30A
Rise Time		150

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