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IXSR40N60BD1 IGBT Transistor

The IXSR40N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSR40N60BD1 transistor as follows.

Circuit diagram symbol of the IXSR40N60BD1 transistor

IXSR40N60BD1 Transistor Specification

Transistor Code IXSR40N60BD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOPLUS247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 70A
Rise Time 120

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