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IXSN80N60AU1 IGBT Transistor

The IXSN80N60AU1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSN80N60AU1 transistor as follows.

Circuit diagram symbol of the IXSN80N60AU1 transistor

IXSN80N60AU1 Transistor Specification

Transistor Code IXSN80N60AU1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOTOP
Collector Power Dissipation (Maximum) Pc 500W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 160A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 8500pF
Rise Time 140

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