IXSN80N60AU1 IGBT Transistor

The IXSN80N60AU1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSN80N60AU1 transistor as follows.

IXSN80N60AU1 Transistor Specification

Transistor Code		IXSN80N60AU1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	160A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		8500pF
Rise Time		140

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