IXSN80N60A IGBT Transistor

The IXSN80N60A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSN80N60A transistor as follows.

IXSN80N60A Transistor Specification

Transistor Code		IXSN80N60A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC

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