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IXSN62N60U1 IGBT Transistor

The IXSN62N60U1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSN62N60U1 transistor as follows.

Circuit diagram symbol of the IXSN62N60U1 transistor

IXSN62N60U1 Transistor Specification

Transistor Code IXSN62N60U1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOTOP
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 90A
Operating Junction Temperature (Maximum) 150 oC

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