IXSN62N60U1 IGBT Transistor

The IXSN62N60U1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSN62N60U1 transistor as follows.

IXSN62N60U1 Transistor Specification

Transistor Code		IXSN62N60U1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	90A
Operating Junction Temperature (Maximum)		150 oC

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