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IXSN52N60AU1 IGBT Transistor

The IXSN52N60AU1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSN52N60AU1 transistor as follows.

Circuit diagram symbol of the IXSN52N60AU1 transistor

IXSN52N60AU1 Transistor Specification

Transistor Code IXSN52N60AU1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOTOP
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 80A
Operating Junction Temperature (Maximum) 150 oC

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