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IXSN50N60BD2 IGBT Transistor

The IXSN50N60BD2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSN50N60BD2 transistor as follows.

Circuit diagram symbol of the IXSN50N60BD2 transistor

IXSN50N60BD2 Transistor Specification

Transistor Code IXSN50N60BD2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOTOP
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC

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