The IXSN35N100U1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the IXSN35N100U1 transistor as follows.
Transistor Code | IXSN35N100U1 | |
---|---|---|
Transistor Type | IGBT | |
IGBT Control Channel Type | N-Channel | |
Package | ISOTOP | |
Collector-Emitter Voltage (Maximum) | VCE | 1000V |
Collector Current (Maximum) | IC | 34A |
Operating Junction Temperature (Maximum) | 150 oC |
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